Low interface state density oxide-GaAs structures fabricated by in situ molecular beam epitaxy
نویسندگان
چکیده
Several oxide-GaAs heterostructures were fabricated using in situ multiple-chamber molecular beam epitaxy. The oxides include SiO2, MgO, and Ga2O3~Gd2O3!, all evaporated by an electron beam method. The SiO2 and Ga2O3~Gd2O3! films are amorphous while the MgO films are crystalline and part of the films are epitaxially grown on GaAs~100!. Among these heterostructures, the Ga2O3~Gd2O3!–GaAs shows a photoluminescence intensity comparable to that of Al0.45Ga0.55As– GaAs, and forms accumulation and inversion layers as measured from capacitance voltage measurement in quasistatic and high frequency modes. © 1996 American Vacuum Society.
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